The rapid development of integrated circuits is inseparable from the support of materials and system integration technology. High-purity metal sputtering targets are used as key materials for physical vapor deposition (PVD) processes in chip manufacturing and packaging, and are used in the preparation of various functional films. Its development and growth can not only greatly promote the upgrading of the traditional non-ferrous metal materials industry structure in the upstream, but also promote the technological progress and stable and rapid development of the downstream electronics manufacturing industry.
Domestic high-purity sputtering target companies emerge
Growing various important thin films on a semiconductor substrate (substrate) is one of the most core processes in the manufacture of integrated circuit chips. The physical vapor deposition (PVD) -based sputtering process has the advantages of high film purity, good film formation quality, fast deposition speed, and stable and reliable process. It is widely used in integrated circuit manufacturing and has irreplaceability. The raw material of the sputter-deposited thin film is the target. The chemical purity and microstructure of the target directly determine the performance of the thin films such as contact layer, dielectric layer, and interconnect layer in the chip, thereby affecting the performance and life of electronic products. The chip has very high requirements for sputtering targets. It requires the target purity to be above 5N (99.999%).
Ultra-high-purity metal materials and sputtering targets are key raw materials necessary for chip manufacturing, and have many advantages such as uniformity and controllability of metal coating. The sputtering target is made of ultra-high-purity metal (aluminum, titanium, copper, tantalum, cobalt, tungsten, etc.) through a series of complex precision processes such as pressure processing, heat treatment, machining, cleaning and packaging. Using physical vapor deposition technology, high-pressure accelerated gaseous ion bombardment causes the atoms of the target to be sputtered out and deposited on the silicon wafer in the form of a thin film, eventually forming a complex wiring structure in a semiconductor chip. The target material accounts for about 3% of the semiconductor materials.
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